2022 Fiscal Year Annual Research Report
Near-infrared GaN quantum cascade laser for the next-generation self-driving car
| Project/Area Number |
21H01376
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| Allocation Type | Single-year Grants |
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| Research Institution | Institute of Physical and Chemical Research |
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Principal Investigator |
王 利 国立研究開発法人理化学研究所, 光量子工学研究センター, 研究員 (50804035)
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| Project Period (FY) |
2021-04-01 – 2025-03-31
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| Keywords | GaN/AlGaN quantum wells / laser |
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| Outline of Annual Research Achievements |
1.the feasible QCLs design with improved robustness on strain relaxation is predicted by using nonequilibrium green’s function (NEGF) models. We update our models by including the strain relaxation parameters along the quantum wells epitaxy directions, and also the threading dislocation defects scattering is also developed to convince the prediction; 2. By growing um-thick GaN/AlGaN cascade quantum wells, we confirm the current-bias characteristic consistently with the calculation of NEGF models. We also observe the intersubband electroluminescence at targeted frequency. This results confidences the next step for laser; 3. The laser cavity structures processing has been ongoing.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
(1) we predict the designs relying on more convince considering on the quantum transports; This can guide us to develop more novel QCL designs; (2)The electrical pumping is successfully carried out in cascading GaN/AlN quantum wells structure, and the observation of intersubband electroluminescence confirms the feasibility of intersuband transition lasing in GaN materials.
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| Strategy for Future Research Activity |
(1) to approach the lasing, FP cavity structure is used. The facet planes are challenging for GaN. We will develop the processing to realize the parallel mirror flat facets.
(2) at present, the main GaN/AlGaN epitaxy is based on polar plane directions, c-plane. Meanwhile, in views of the robustness of device realization, the nonpolar quantum wells structures will be more attractive. We will step into the development of GaN/AlGaN epitaxy on semi- or non-polar planes.
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