2023 Fiscal Year Annual Research Report
Demonstration of 2-Dimensional h-BN Power Device Operation
| Project/Area Number |
23KJ0416
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NGAMPRAPAWAT SUPAWAN 東京大学, 工学系研究科, 特別研究員(PD)
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| Project Period (FY) |
2023-04-25 – 2024-03-31
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| Keywords | hexagonal boron nitride / carbon doping / power devices / single crystal / carrier injection / rectification |
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| Outline of Annual Research Achievements |
This study proposes single-crystal carbon-doped hexagonal boron nitride (hBN:C) as a potential material for high-temperature and high-voltage two-dimensional (2D) power-switching devices, which will fulfill the 2D electronic platform. We have established the contact formation technique and shown that, with C doping, carriers can be injected, and the injection mechanism is proposed; however, when C doping density increases to 10 at% C, the applied electric field (E) induces C migration due to the existence of 2D C domains in 2D hBN matrix. The appropriate C doping density that does not lead to C domain formation is essential. To demonstrate hBN:C-based power devices, a relatively large E is required to inject carriers in a lateral structure, we thus propose a vertical structure, where the channel length is reduced from micrometer scale to nanometer scale, to show rectifying properties with an expected smaller turn-on voltage. The rectified current can be successfully observed in these vertical hBN:C devices. We have paved the way for understanding an insight into the properties of hBN:C as well as developing the future 2D hBN-based electronics.
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