Variety of physical properties of hetero-junction with ordered alloys and the spin devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 24226001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: ANDO Yasuo 東北大学, 大学院工学研究科, 教授 (60250726)
• Co-Investigator(Kenkyū-buntansha): 大兼 幹彦 東北大学, 工学(系)研究科(研究院), 准教授 (50396454) ; 永沼 博 東北大学, 工学(系)研究科(研究院), 助教 (60434023)
• Co-Investigator(Renkei-kenkyūsha): MIZUKAMI Shigemi 東北大学, 原子分子材料科学高等研究機構, 教授 (00339269)
• Project Period (FY): 2012-05-31 – 2017-03-31
• Keywords: スピンデバイス / ヘテロ接合 / 規則合金 / ホイスラー合金 / L10合金 / マルチフェロ材料 / トンネル接合

Outline of Final Research Achievements

L10 structure MnAl thin film with large magnetic anisotropy, small magnetic relaxation constant and good flatness was succeeded in producing. A CoFeMnSi Heusler alloy exhibiting high spin polarizability and small magnetic relaxation constant could be fabricated on an amorphous SiO2 substrate. By inserting an ultra-thin Pd thin film on the L10 - FePd electrode and optimizing the deposition temperature, it was possible to fabricate a tunnel insulating layer epitaxially grown. We succeeded to fabricate ultra-thin and high quality Bi ferrite thin film on LaSrMnO3 ferromagnetic layer.
Since the heterojunction using the ordered alloy as described above exceeds the performance of the conventional spin device and shows various physical phenomena, it leads to the creation of a completely new spin device.

Free Research Field

磁気工学