2014 Fiscal Year Final Research Report
Flexible electronics on mica substrates
Project/Area Number |
24245040
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Inorganic industrial materials
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Project Period (FY) |
2012-05-31 – 2015-03-31
|
Keywords | 雲母 / 窒化物半導体 / フレキシブルエレクトロニクス |
Outline of Final Research Achievements |
We have investigated the feasibility of fabricating flexible GaN-based light emitting diodes (LEDs) on mica substrates. The polarity control of the GaN films on mica substrates has been demonstrated with and without the AlN buffer layers. It has been found that it is possible to grow n- and p-type GaN films and to form a multiple quantum wells on mica substrates. We fabricated GaN-based LEDs and confirmed their successful operation. These results indicate that the present technique is quite promising as a future fabrication method for large-area and flexible GaN light-emitting displays.
|
Free Research Field |
半導体素子工学
|