Development of the magneto-resistive devices with high-output and low-power-consumption using L10/Heusler electrodes

2014 Fiscal Year Final Research Report

• Project/Area Number: 24246002
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: OOGANE MIKIHIKO 東北大学, 工学(系)研究科(研究院), 准教授 (50396454)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: スピンエレクトロニクス / ハーフメタル / ホイスラー合金 / トンネル接合 / L10合金 / トンネル磁気抵抗効果

Outline of Final Research Achievements

We have fabricated L10-ordered Mn-based perpendicular magnetized ferromagnetic films with high magnetic anisotropy and low magnetic damping constant. Magnetic tunnel junctions (MTJs) with the multi-layer electrodes of Mn-based alloys and ferromagnetic films or Heusler alloys were fabricated. We have successfully observed tunnel magnetoresistance effect in the fabricated MTJs. In addition, very high MR ratio of 80% was observed at RT and spin-transfer-switching was also observed in CPP-GMR devices with Heusler alloy electrodes. These results indicate that developed devices are very useful in future spintronics field.

Free Research Field

応用物理