Formation of relaxed Ge thin films by surfactant mediation and its application to devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 24246003
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: WASHIO KATSUYOSHI 東北大学, 工学(系)研究科(研究院), 教授 (20417017)
• Co-Investigator(Kenkyū-buntansha): SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: ゲルマニウム / カーボン / サーファクタント / 緩和 / シリコン / 機能融合 / ドット / 自己組織

Outline of Final Research Achievements

To create function-merged devices, formation of fully-relaxed Ge thin films on Si substrate by using carbon as a surfactant was investigated. By studying the process through the formation of Si-C bonds and the simultaneous fabrication of Si-C/Ge-C bonds, it was confirmed that fully-relaxed Ge thin films could be formed. Furthermore, it was found that the formation of Ge quantum dots in a self-assemble manner would be formed by the reconstruction of Si(100) surface into C(4x4) structure through the formation of Si-C bonds.

Free Research Field

半導体工学