2014 Fiscal Year Final Research Report
GaAsBi laser diodes with low temperature dependence of lasing wavelength
| Project/Area Number |
24246008
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Kyoto Institute of Technology |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
OE Kunishige 京都工芸繊維大学, 名誉教授 (20303927)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Keywords | レーザダイオード / III-V族半導体 / 半金属 / 分子線エピタキシー / レーザ / 結晶成長 / ビスマス / 局在準位 |
|---|
| Outline of Final Research Achievements |
Molecular beam epitaxy (MBE) of GaAsBi and related alloys opens up a new path to exploit metastable alloys exhibiting a particular property such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes an improvement in quality of GaAsBi under an extreme growth condition outside the conventional one for high-quality III-V semiconductors.
GaAsBi alloys with GaBi molar fractions up to 14.8% has been coherently grown on GaAs. GaAsBi emitted bright photoluminescence (PL) at a wavelength of 1.3 um without intensity degradation. The lasing emission of up to 1.2 and 1.05 um was demonstrated in photo- and electrically-pumped GaAsBi lasers, respectively at room temperature.
|
| Free Research Field |
半導体工学
|
