New Dopants for Creation of Next Generation Functional Silicon Devices

2015 Fiscal Year Final Research Report

• Project/Area Number: 24246017
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: MIKI Kazushi 国立研究開発法人物質・材料研究機構, 高分子材料ユニット, グループリーダー (30354335)
• Co-Investigator(Kenkyū-buntansha): FUKATSU Susumu 東京大学, 総合文化研究科, 教授 (60199164)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: ドーパント / エピタキシャル成長 / ナノ構造 / EXAFS

Outline of Final Research Achievements

In the Si LSI technology, substitutional structures of the dopant atoms into the silicon crystal as ionized local electronic states have been used to be carrier sources. For development of quantum information processing devices and spintronics devices which become now popular topics, substitutional structures of the heavy metal atoms into the silicon crystal as ionized or not ionized local electronic states should be a need to be spin sources.
By utilizing the specificity of heavy metal nanostructures, the research and development of high concentration of spin source impurities δ doping was carried out. High concentration in the spin source impurities δ -doped was achieved for bismuth and manganese elements. The results of this study, the high concentration impurity δ doping technique of bismuth and manganese, is expected to be seeds for creating a new silicon-based spintronic devices.

Free Research Field

結晶成長