Thin film deposition based on reducing activity of nanosiicon ballistic electron emitter

2014 Fiscal Year Final Research Report

• Project/Area Number: 24246053
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KOSHIDA NOBUYOSHI 東京農工大学, 工学(系)研究科(研究院), 名誉教授 (50143631)
• Co-Investigator(Kenkyū-buntansha): SHIRAKSHI Junichi 東京農工大学, 大学院工学研究院, 准教授 (00315657)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: ナノシリコン / 弾道電子放出 / 還元効果 / 薄膜堆積 / 薄膜デバイス

Outline of Final Research Achievements

Fundamental studies have been conducted for developing an alternative liquid-phase thin-film deposition technique based on the reducing activity of nanosilicon ballistic electron emitter. From electrochemical analyses of ballistic electron injection into salt solutions, it was confirmed that a unilateral reduction proceeds in different way from either conventional electroplating or electron-beam-induced decomposition. As a consequence, thin metal and semiconductor (Si, Ge, and SiGe) films are uniformly deposited on the emitting surface. The deposition rate was formulated by modeling the mechanism. The structural and compositional characterizations of deposited thin films verified the usefulness of this deposition scheme as a contamination-free room-temperature process. Further technological potential was demonstrated for thin Cu films under a printing mode in which the ballistic electrons impinge upon solution-coated target substrate arranged in parallel with a small space.

Free Research Field

光電子デバイス･材料工学