Generation and control of quantum correlated photons from atomic-layer doped semiconductors

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360004
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Saitama University
• Principal Investigator: YAGUCHI Hiroyuki 埼玉大学, 理工学研究科, 教授 (50239737)
• Co-Investigator(Kenkyū-buntansha): ONABE Kentaro 東京大学, 大学院新領域創成科学研究科, 教授 (50204227) ; KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115) ; KUBOYA Shigeyuki 東北大学, 金属材料研究所, 助教 (70583615)
• Co-Investigator(Renkei-kenkyūsha): HIJIKATA Yasuto 埼玉大学, 大学院理工学研究科, 准教授 (70322021) ; YAGI Shuhei 埼玉大学, 大学院理工学研究科, 助教 (30421415) ; AKIYAMA Hidefumi 東京大学, 物性研究所, 准教授 (40251491)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 半導体 / 光物性 / エピタキシャル成長 / 量子光学 / 単一光子 / 量子もつれ光子対

Outline of Final Research Achievements

We have grown nitrogen and erbium atomic-layer doped semiconductors to obtain unpolarized single photons and quantum-entangled photon pairs with highly reproducible wavelengths, which play a key role in the quantum information science. We have successfully observed completely unpolarized biexciton and exciton emission lines, which are suitable for the application to polarization-entangled photon pairs. We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy, and found that overlayer growth at low temperatures is effective in suppressing the surface segregation and obtaining atomic-layer doped structures.

Free Research Field

応用物理学　結晶工学　応用物性