2014 Fiscal Year Final Research Report
Comprehensive multi-level spectroscopy of below-gap states without electrode
| Project/Area Number |
24360005
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saitama University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
FUKUDA Takeshi 埼玉大学, 理工学研究科, 助教 (40509121)
HIRAYAMA Hideki 理研, 平山量子光素子研究室, 主任研究員 (70270593)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Keywords | フォトルミネッセンス / 半導体 / 非発光再結合準位 |
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| Outline of Final Research Achievements |
Nonradiative recombination (NRR) centers and trap centers which result in efficiency reduction and shortening of operating lifetime were detected based on the method of two-wavelength excited photoluminescence (TWEPL) by improving below-gap excitation (BGE) light sources. We attained first optical detection of NRR centers in AlGaN-MQWs, InAlGaN-MQWs for deep-UV LEDs and derived a set of NRR parameters. Trap centers and NRR centers in Ba3Si6O12N2:Eu2+ (BSON) phosphor were detected by thermo-luminescence and the TWEPL for the first time. The former cause transient component of the BGE effect, while the latter cause the steady state component.
In summary, a comprehensive detection and analysis of defect states in light emitting materials has been attained based on an improved TWEPL method.
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| Free Research Field |
光物性工学
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