Evaluation of mechanical-electrical coupled properties for single crystal silicon nanowires using MEMS

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360046
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Materials/Mechanics of materials
• Research Institution: Kobe University
• Principal Investigator: ISONO Yoshitada 神戸大学, 工学(系)研究科(研究院), 教授 (20257819)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 実験ナノメカニクス / MEMS / ナノワイヤ / マルチフィジックス

Outline of Final Research Achievements

The strain-induced silicon nanowires (SiNWs) will be effective for high-sensitive piezoresistance elements used in MEMS force sensors due to their electronic energy band structural features under mechanical strain. This research examined the piezoresistive effect of individual SiNWs under uniaxial tensile strain using the MEMS-based nanotensile testing device. The SiNWs in directions of <111> and <112> were grown on the testing device by the VLS technique. The SiNWs were tensioned using the device and simultaneously their I-V characteristics were measured. The resistance change ratio of strain-induced SiNWs of <111> and <112> directions have reached -80% and -35% at 0.03 strain, respective. The gauge factors for SiNWs of <111> and <112> also showed -170.7 at 0.002 strain and -128.9 at 0.001 strain, respectively, which were larger than unknown values for n-type bulk silicon. These results are extremely important to nanomechanical force sensors.

Free Research Field

実験ナノメカニクス