Researches of high temperature power switching devices on high quality semiconductor diamond

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360113
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Power engineering/Power conversion/Electric machinery
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Umezawa Hitoshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (80329135)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: ダイヤモンド / パワーデバイス / FET / 高温動作

Outline of Final Research Achievements

In order to realize high temperature high power electronics, development on device fabrication technique has been carried out. Firstly, the operation characteristics was estimated using the analytical model with material parameters. The doping concentration and the thickness of drift layer for diamond switching devices were optimized which realizes constant drain current and transconductance in the temperature ranges from 200 to 300 degC. Fabricated planer MESFET shows breakdown voltages more than 1.5kV which was the best value in the world. To decrease the Ohmic contact resistances on source and drain, p+ contact layers were formed on p- drift layer of MESFET. The increase of the gate width more than 30mm was realized using interconnection of source contact.

Free Research Field

電子デバイス