2014 Fiscal Year Final Research Report
Fabrication of nanowire-based light emitting nanodevices
| Project/Area Number |
24360114
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Hokkaido University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SASAKURA Hirotaka 北海道大学, 創成研究機構, 特任助教 (90374595)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Keywords | 半導体ナノワイヤ / 有機金属気相選択成長 / 発光ダイオード / レーザ / 量子ドット / 光共振器 |
|---|
| Outline of Final Research Achievements |
To realize nanowire-based light-emitting devices, we grew III-V semiconductor nanowires by selective-area metalorganic vapor-epitaxy (SA-MOVPE) and carried out characterization of their optical properties. Main results are summarized as follows. (1) The far-field emission pattern of nanowire-based light-emitting diode was investigated experimentally and theoretically. Peculiar emission patterns for nanowires were clrarified. (2) Density-controled InP nanowire arrays were realized by SA-MOVPE. The InAsP quantum dots (QDs) were embedded in the low-density InP nanowire arrays, and emission from a single QD in a single nanowire was confirmed. (3) Mode structure of the nanowire-based optical cavity was investigated by numerical simulation and its design principle was established. GaAs/InGaAs/GaAs core-multishell heterostructure nanowires were grown following the established design and cavity mode resonance was clearly identified by temperature-dependent photoluminescence study.
|
| Free Research Field |
半導体ナノ構造
|
