Extremely high density carrier doping mechanism on diamond and application to the next generation devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360124
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University
• Principal Investigator: KASU Makoto 佐賀大学, 工学(系)研究科(研究院), 教授 (50393731)
• Co-Investigator(Kenkyū-buntansha): SHIRAISHI Kenji 名古屋大学, 大学院工学研究科, 教授 (20334039)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: ダイヤモンド / キャリア伝導

Outline of Final Research Achievements

We investigated high-density hole carrier generation mechanism. First, we found NO2 adsorption on diamond surface results in hole doping, and obtained extremely high hole density. Next, we found that Al2O3 deposited by ALD stabilizes hole channel, and thermally stable FET operation. Next, by synchrotron YPS/UPS, we found O-related surface states and determined the band diagram. Next, by C-V measurements, we determined surface charge and state densities. From the first-principle calculations, w proposed the NO2-related SOMO model to explain the hole doping. By these technologies, we obtained world-high-level RF and DC FET characteristics.

Free Research Field

電気・電子材料