Multi-axial analysis of strain states introduced in nano area on Ge and SiGe super-thin films by Raman spectroscopy

2016 Fiscal Year Final Research Report

• Project/Area Number: 24360125
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Meiji University
• Principal Investigator: OGURA ATSUSHI 明治大学, 理工学部, 教授 (00386418)
• Co-Investigator(Kenkyū-buntansha): 廣沢 一郎 公益財団法人高輝度光科学研究センター, その他部局等, 研究員 (00360834) ; 小瀬村 大亮 明治大学, 公私立大学の部局等, 研究員 (00608284)
• Co-Investigator(Renkei-kenkyūsha): NUMASAWA Youichiro 明治大学, 研究・知財戦略機構, 研究推進員(客員研究員) (50569837) ; SAWAMOTO Naomi 明治大学, 研究・知財戦略機構, 研究推進員(客員研究員) (20595087)
• Research Collaborator: USUDA Koji (株)東芝
• Project Period (FY): 2012-04-01 – 2017-03-31
• Keywords: SiGe / 応力・歪 / 液浸ラマン分光法 / フォノン変形ポテンシャル（PDPs） / 有限要素法（FEM） / 第一原理計算（ab initio）

Outline of Final Research Achievements

Both the longitudinal optical (LO) and transverse optical (TO) phonons are indispensable for multiaxial strain analysis in ultra-thin Ge and SiGe films by Raman spectroscopy. The TO phonon, however, is hardly excited under (001) backscattering geometry due to the kimitted z-polarized component. We achieved excitation of both LO and TO phonons by oil-immersion Raman spectroscopy, which can excite the z-polarized component effectively because of high numerical aperture lens. Then, the phonon deformation potentials (PDPs) of SiGe for the whole Ge concentration range were extracted for the first time. Thus, the derived PDPs of SiGe allows us to measure complex strain states in SiGe promised as next-generation channel material.

Free Research Field

電子・電気材料工学