Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor Devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360130
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Tsukuba
• Principal Investigator: SANO Nobuyuki 筑波大学, 数理物質系, 教授 (90282334)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 電子デバイス・機器 / 電子輸送 / モンテカルロ法 / ボルツマン方程式 / MOSFET / トランジスタ / デバイスシミュレーション / スケーリング

Outline of Final Research Achievements

The 3-dimensional devices and Junctionless FETs (J-FETs), which are receiving great attention for near future devices, are studied numerically with emphasis on the Coulomb interaction among electrons via Monte Carlo simulations for realistic prediction of device properties. Since high electron density in the channel is inevitable in J-FETs, the Coulomb interaction greatly affects the device performance, namely, the drain current is degraded by about 30 %. Also, we have found that the dynamical screening effects in the channel region (dynamical plasmon excitations) become of crucial importance in determining device properties in nanoscale 3-D devices.

Free Research Field

デバイス物理