Integration of Power Supply Circuit With High Frequency Switching Amplifier Using GaN HEMT device

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360153
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Communication/Network engineering
• Research Institution: Fukuoka University
• Principal Investigator: Suetsugu Tadashi 福岡大学, 工学部, 教授 (60279255)
• Co-Investigator(Kenkyū-buntansha): SEKIYA Hiroo 千葉大学, 融合科学研究科, 教授 (20334203) ; Wei Xiuqin 千葉工業大学, 電気電子工学科, 准教授 (80632009)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 電源回路 / 増幅器 / 高周波 / GaN HEMT / マイクロマシン

Outline of Final Research Achievements

This research analyzed operation of class E amplifier and its family circuits and proposed several improvements which enables low peak switch voltage, low surge voltage, and high efficient operation for wide load range in order to realize on-chip high frequency power supply. Especially, this research project analyzed effect of nonlinear capacitance to the peak switch voltage. This research project proposed circuits which can reduce peak switch voltage of class E amplifier, circuits which can reduce surge voltage at load fluctuations, circuits which can maintain high efficiency at load variations, and driving circuits suitable for GaN HEMT devices. These research achievements were published in journals of IEEE, IEEJ, IEICE, and IJRER.

Free Research Field

電子回路