Pependicular magnetic anisotropy at metarl/insulater interface toward spintronics devicies with low power consumption

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360264
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Physical properties of metals
• Research Institution: Osaka University
• Principal Investigator: NAKATANI Ryoichi 大阪大学, 工学(系)研究科(研究院), 教授 (60314374)
• Co-Investigator(Kenkyū-buntansha): SHIRATSUCHI Yu 大阪大学, 大学院工学研究科, 准教授 (70379121) ; NOMURA Hikaru 大阪大学, 大学院工学研究科, 助教 (20566258)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: スピントロニクス / 磁性薄膜 / 強磁性 / 反強磁性 / 界面 / 電界効果

Outline of Final Research Achievements

Toward spintronic devices with low power consumption, we investigated the interface magnetic anisotropy of metallic ferromagnet (FM)/oxide antiferromagnet stacked film. In particular we focused on the microscopic mechanism and the electric-field control of the exchange anisotropy at the FM/Cr2O3 interface. Main results are (1) the exchange anisotropy energy density changes with the ferromagnetic layer composition and the crystalline quality of the Cr2O3 layer, (2) the new type of temperature dependence of exchange anisotropy, i.e. the high temperature regeneration was found in the Pt/Co/0.2-nm-thick Pt/Cr2O3/Pt stacked film, (3) the interfacial uncompensated Cr spins are un-reversed with the FM spin reversal. We also developed the electric-field induced switching of the exchange anisotropy based on the magneto-electric effect of Cr2O3.

Free Research Field

磁性材料