Elucidation and control of nanoionics phenomena at oxide/metal heterointerfaces

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360278
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: Tsuruoka Tohru 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主幹研究員 (20271992)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 酸化物 / カチオン伝導 / 酸化還元反応 / ナノイオニクス / 量子化コンダクタンス / シナプス動作

Outline of Final Research Achievements

We have investigated the switching mechanism and functionalities of Cu,Ag/Ta2O5/Pt atomic switch-type resistance change memories based on the transport of metal ions in oxide thin films and electrochemical reactions at metal/oxide interfaces, which are called ‘nanoionics phenomena’. We performed real-space observation of a conducting filament formed in the memory by atomic force and transmission electron microscopies, elucidation of detailed redox reaction at metal/oxide interfaces and moisture absorption effects of oxides by electrochemical methods, and demonstration of conductance quantization and synaptic behavior.

Free Research Field

ナノイオニクスを利用した抵抗変化メモリと次世代デバイスの開発