Seeking innovative alloy elements for development of low-temperature and high-reliability Cu-alloy interconnects and electrodes with reducing process temperature

2014 Fiscal Year Final Research Report

• Project/Area Number: 24360307
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Material processing/treatments
• Research Institution: Osaka University
• Principal Investigator: ITO KAZUHIRO 大阪大学, 接合科学研究所, 教授 (60303856)
• Co-Investigator(Kenkyū-buntansha): KOHAMA Kazuyuki 大阪大学, 接合科学研究所, 助教 (00710287)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: Cu配線 / 熱処理 / Cu(Mg) / Cu(Ti) / 抵抗率 / 密着性 / 接触抵抗 / IGZO

Outline of Final Research Achievements

For development of high-performance electronic devices, not only seeking innovative semiconductors but also reduction of energy consumption at metal interconnects and electrode/TFT interfaces is essential. In LCDs and touch panels, copper is one of candidate materials for the purpose, but there is Cu-related issues to be overcome such as poor adhesion to glass substrates. We have successfully prepared low-resistivity and excellent-adhesion Cu interconnects on glass substrates using Cu(Mg) alloy films. Mg as the selected alloy element can reduce the process temperature and time to lower than 300°C within 30 min. In addition, for development of high-performance IGZO-TFT devices with ITO/Cu(M)/IGZO contact junctions, contact resistance of Cu(Ti)/ITO and Cu(Ti)/IGZO, and their interface microstructure were investigated. At the interface, Ti in the alloy elements could form the amorphous TiOx reaction layer which exhibited p-type semiconducting properties, leading low contact resistance.

Free Research Field

金属薄膜