Study on the spin relaxation of charge carriers in semiconductor quantum dots by photon fluctuation measurement

2014 Fiscal Year Final Research Report

• Project/Area Number: 24510145
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanostructural science
• Research Institution: National Institute for Materials Science
• Principal Investigator: KURODA Takashi 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主席研究員 (00272659)
• Co-Investigator(Renkei-kenkyūsha): MANO Takaaki 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
• Research Collaborator: BERNHARD Urbaszek Université de Toulouse ; XAVIER Marie Université de Toulouse ; THIERRY Amand Université de Toulouse ; CHENG Shun-Jen National Chiao Tung University ; HA Neul 独立行政法人物質・材料研究機構, ポスドク ; LIU Xiangming 独立行政法人物質・材料研究機構, ポスドク
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 量子ドット

Outline of Final Research Achievements

The polarization state of photons emitted from a single quantum dot depends on the spin state of charge carriers existing in the dot. Thus, the fluctuation of photon polarization is expected to reveal the spin relaxation of charge carriers. Here we develop a new spectroscopy technique based on photon polarization correlations, and explore the charge spin relaxation with extended time scales.

Free Research Field

光物性物理学