• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2014 Fiscal Year Final Research Report

A study on room-temperature atomic layer deposition by using radical-enhanced surface-stimulation techniques

Research Project

  • PDF
Project/Area Number 24510147
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionYamagata University

Principal Investigator

HIROSE Fumihiko  山形大学, 理工学研究科, 教授 (50372339)

Project Period (FY) 2012-04-01 – 2015-03-31
Keywords原子層堆積 / 励起 / 金属酸化膜 / 吸着 / 酸化 / 室温
Outline of Final Research Achievements

To realize next-generation semiconductor devices with an atomic scale, we developed room-temperature (RT) atomic layer deposition of HfO2, TiO2 and Al2O3 that might allow the minimum thermal budget in the LSI fabrication. In the course of the research, we directly observed fundamental reactions of source gas adsorption and oxidation. It was found that metal organic precursors of TEMAH, TDMAT and TMA are possible to adsorb on the hydroxylated oxide surfaces even at RT, whereas the plasma excited water and oxygen is effective in oxidizing the precursor saturated surface with the OH termination. The reaction models of the RT ALD were proposed in this study.

Free Research Field

電子工学・半導体プロセス

URL: 

Published: 2016-06-03  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi