Combined in situ XAFS and XRD Analysis of Active Structures in Inorganic Luminescent Devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 24510162
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: BANDO KYOKO 独立行政法人産業技術総合研究所, ナノシステム研究部門, 主任研究員 (50357828)
• Co-Investigator(Kenkyū-buntansha): KOBAYSHI Eiichi 公益財団法人佐賀県地域産業支援センター九州シンクロトロン光研究センター, ビームライングループ, 研究員 (80319376)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: in situ 構造解析 / XAFS および XRD同時測定 / 無機発光材料 / アルミナ自立膜 / Tbドープ / electroluminescence / photoluminescence

Outline of Final Research Achievements

The aim of this project was to develop a new in situ XAFS technique, which enables simultaneous measurement of XRD for the same sample. The prototype in situ XAFS and XRD cell was tested for the measurement of a Tb doped alumina film. The Tb doped alumina film exhibits photo- and electroluminescent properties after calcination treatments. The in situ measurements were conducted to elucidate the mechanism how the active structure was formed and clarify the exact structure of the active site. The experiments were conducted under a flow of inert gas, increasing the temperature from room temperature to 700 degree C. Tb LIII-edge XAFS and XRD of alumina were successfully observed. The results indicated that Tb ions were atomically dispersed in alumina. They were not incorporated in the framework of alumina but were located on the surface of alumina nanoparticles.

Free Research Field

放射光利用したナノ物質構造解析