Fabrication of the flexible TFT using the atmospheric pressure PCVD growth nanotube and demonstration of MSI .

2014 Fiscal Year Final Research Report

• Project/Area Number: 24510177
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Nagoya University
• Principal Investigator: KISHIMOTO Shigeru 名古屋大学, 工学(系)研究科(研究院), 助教 (10186215)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: カーボンナノチューブ / 薄膜トランジスタ / 大気圧プラズマ / フレキシブルデバイス

Outline of Final Research Achievements

I developed atmospheric pressure plasma enhanced CVD system, the carbon nanotubes grown by atmospheric pressure has been demonstrated that operating as a thin film transistor. The system shown from electrical characteristics to be able to depositing CNT in large area. By producing a flexible integrated circuit on a plastic substrate in a simple transfer method using polyvinyl alcohol, and to demonstrate the operation of the ring oscillator delay time 1.1 μsec.

Free Research Field

電子工学