Verification of ion implantation method using intense pulsed heavy ion beam for next generation semiconductor

2014 Fiscal Year Final Research Report

• Project/Area Number: 24540534
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Plasma science
• Research Institution: University of Toyama
• Principal Investigator: ITO Hiroaki 富山大学, 大学院理工学研究部(工学), 教授 (70302445)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: パルス重イオンビーム / 両極性パルス / パルスイオン注入 / レーザーイオン源 / パルス電力技術

Outline of Final Research Achievements

The intense pulsed ion beam has received extensive attention as a tool for a new ion implantation technology named pulsed ion beam implantation to semiconductor materials such as silicon carbide, since the ion implantation and the annealing can be completed simultaneously. To realize the new ion implantation, it is very important to develop the intense pulsed ion beam technology of generating high-purity ion beams from various species. For the pulsed nitrogen ion beam acting as a donor, we improved the intensity and the spatial uniformity of the ion beam. For the pulsed aluminum ion beam acting as an acceptor, we developed the vacuum arc plasma gun and the exploding wire ion source and evaluated the dependence on electrical parameters and electrode structure. In addition, we developed the laser ion source for the pulsed metallic ion beam. To investigate the irradiation effect of the ion beam, the energy density was evaluated by irradiating a silicon substrate with the pulsed ion beam.

Free Research Field

プラズマ理工学