Transport properties and defect kinetics during silicon thin film growth

2014 Fiscal Year Final Research Report

• Project/Area Number: 24540546
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Plasma science
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: NUNOMURA Shota 独立行政法人産業技術総合研究所, 太陽光発電工学研究センター, 主任研究員 (50415725)
• Co-Investigator(Renkei-kenkyūsha): SAKATA Isao 産業技術総合研究所, 太陽光発電工学研究センター (60357100)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: プラズマ / 半導体 / 太陽電池 / 欠陥 / プラズマＣＶＤ / アモルファスシリコン / 光電流 / キャリア輸送

Outline of Final Research Achievements

We have developed an in-situ characterization technique for the carrier transport and defects in semiconductor films during plasma processing. By applying this technique to hydrogenated amorphous silicon under growth by plasma enhanced CVD, we find that the defect-rich surface layer of <20nm is formed and the bulk layer is grown underneath it. During postgrowth annealing, the defect-rich surface layer is reorganized and the carrier transport is improved by one order of magnitude.

Free Research Field

プラズマエレクトロニクス