Elucidation of device operation and degradation mechanism of low voltage ion gel-gated organic transistors from microscopic viewpoints and performance improvement

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560004
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Tsukuba
• Principal Investigator: MARUMOTO Kazuhiro 筑波大学, 数理物質系, 准教授 (50293668)
• Co-Investigator(Renkei-kenkyūsha): TAKENOBU Taishi 早稲田大学, 理工学術院, 教授 (70343035) ; IWASA Yoshihiro 東京大学, 工学研究科, 教授 (20184864) ; AZUMI Reiko 独立行政法人産業技術総合研究所, 電子光技術研究部門, グループ長 (40356366)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 有機トランジスタ / 電子スピン共鳴 / ミクロ特性評価 / 素子動作機構 / 素子劣化機構 / イオンゲル / 低電圧駆動 / 高電荷密度状態

Outline of Final Research Achievements

We applied an electron spin resonance (ESR) method to low voltage ion gel-gated organic transistors to clarify the operation and degradation mechanisms of the devices under high charge density conditions through microscopic characterization by ESR under device operation. The ESR method is high sensitive and capable of characterizing materials at the molecular level. Using the ESR method, we studied electronic states of charge carriers in organic materials, such as spin states and magnetic interactions among carriers, as a function of gate voltage in detail. As a result, we clarified the phenomena of the dimensionality variation in the magnetic interactions from zero-dimensional to two- or three-dimensional and the realization of the complete nonmagnetism with increasing charge density.

Free Research Field

有機エレクトロニクス