2014 Fiscal Year Final Research Report
Study on strain fields of GaN crystals which have microstructures in mesoscopic scale.
| Project/Area Number |
24560009
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Japan Women's University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Keywords | Ｘ線回折 / 窒化ガリウム / メゾスコピック / Ｘ線トポグラフィー / 結晶欠陥 / 電子回折 / 表面構造 |
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| Outline of Final Research Achievements |
By X-ray topography using CCD camera, two images of lattice inclination and lattice expansion or contraction of GaN crystals were obtained separately in micrometer order scale. Using these images, crystal defects in GaN were studied. By using UHV chamber which has reflection high energy electron diffraction apparatus, surface structure of GaN was observed during thermal annealing processes.
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| Free Research Field |
結晶工学
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