Photoluminescene decay time of the exciton-exciton scattering in a semiconductor thin film

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560011
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Nippon Bunri University (2014); Osaka University (2012-2013)
• Principal Investigator: ICHIDA Hideki 日本文理大学, 工学部, 特任准教授 (50379129)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 励起子ポラリトン / 励起子ｰ励起子散乱 / 時間分解発光スペクトル

Outline of Final Research Achievements

We have investigated the mechanism of the photoluminescence-decay time of the exciton-exciton scattering so-called P emission in semiconductor thin films from the viewpoint of the photon-like polariton state which is created by the exciton-exciton scattering process, and located the lower energy region of the bottle neck in the exciton-polariton picture. From the analysis of the time-resolved photoluminescence spectra observed in the ZnO thin files under the high-density excitation conditions, we have obtained the results that the decay time of the PL band of the exciton-exciton scattering becomes faster with decreasing film thickness. From the analysis of the experimental results, we find that the decay time of the photoluminescence of the exciton-exciton scattering is governed by the conversion time from the exciton state to the polariton state．

Free Research Field

光物性