Formation of infrared optical absorption band and intermediate band by hyperdoping of silicon

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560020
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Konan University
• Principal Investigator: UMEZU IKUROU 甲南大学, 理工学部, 教授 (30203582)
• Co-Investigator(Kenkyū-buntansha): YOSHIDA Takehito 阿南工業高等専門学校, 創造技術工学科, 教授 (20370033) ; INADADA Mitsuru 関西大学, システム理工学部, 准教授 (00330407) ; KOHNO Atsushi 福岡大学, 理学部, 教授 (30284160)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: レーザープロセッシング / 中間バンド / 過飽和ドーピング / 半導体 / 太陽電池 / 深い準位

Outline of Final Research Achievements

Hyperdoping of silicon with deep impurities is one of the candidates to improve efficiency of solar cells. We suggested appropriate conditions to prepare samples with less segregation keeping single crystal structure by　pulsed laser processes. The results of optical absorption and electric conductivity are inconsistent, if we assume, as discussed previously, that both the metallic conductivity and large mid-infrared absorption are due to the formation of intermediate band. We proposed new candidates of the origin of these characters based on the experimental results.

Free Research Field

半導体レーザープロセッシング