Control of Fermi level pinning at surfaces and interfaces of InAlN

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560022
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Hokkaido University
• Principal Investigator: AKAZAWA Masamichi 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: InAlN / 表面 / 界面 / 界面準位 / ピンニング / Al2O3

Outline of Final Research Achievements

Fermi level pinning at the surface, insulator/semiconductor interface, and metal/semiconductor interface has been investigated for InAlN lattice matched to GaN. Pinning at the InAlN surface was found to be removed by an appropriate insulator deposition. The interface state density at the insulator/InAlN interface was found to be dependent on the interface formation process and post deposition annealing. An original method to form an Al2O3/InAlN interface with a low interface state density was developed. For the metal/InAlN interface, strong dependence of the Schottky barrier height on the metal work function was seen.

Free Research Field

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