Physics in wetting layer on bond engineering

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560025
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Mie University
• Principal Investigator: ITO Tomonori 三重大学, 工学(系)研究科(研究院), 教授 (80314136)
• Co-Investigator(Kenkyū-buntansha): AKIYAMA Toru 三重大学, 大学院工学研究科, 准教授 (40362363)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 量子論的アプローチ / 半導体ぬれ層 / 吸着・脱離 / 成長過程

Outline of Final Research Achievements

We have systematically investigated structural change in InAs(001)-(2×3) wetting layer surfaces as functions of temperature and beam-equivalent pressure using ab initio-based approach. We found that the (2×3) surface is unstable and does not incorporate In atoms to prevent InAs growth at the conventional growth conditions. This is due to the large strain induced by In adsorption on the wetting layer surface. In order to reduce the large strain, a (4x3) surface appears with missing surface dimer where In atom favorably occupies to form In-As dimer and proceed InAs growth on the wetting layer.

Free Research Field

工学