Influence of strain on the Intermixing in the hetero-epitaxial growth

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560031
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Yokohama City University
• Principal Investigator: SHIGETA YUKICHI 横浜市立大学, 生命ナノシステム科学研究科, 教授 (70106293)
• Co-Investigator(Kenkyū-buntansha): TOSAKA Aki 横浜市立大学, 大学院生命ナノシステム科学研究科, 助教 (20436166)
• Research Collaborator: ISHII Takuya ; NAKATA Junya ; YOSHIDA Ryuuma
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 薄膜成長 / インターミキシング / 歪み半導体 / 走査トンネル顕微鏡

Outline of Final Research Achievements

The influence of strain on the intermixing in the hetero-epitaxial growth is very important in the developing of new materials. We have get two important results about it: (1) In the hetero-epitaxial growth of Si layer on the Ge(111) surface annealed at 450℃, the intermixing of Ge atoms in the Si layer is observed at the thickness over 2 bilayer; (2) In the solid phase epitaxial growth of the Ge/Si(111), we propose a decision rule whether the Ge and Si atoms are mixed or not from the change of the surface morphology after the solid phase epitaxial growth.

Free Research Field

表面科学