• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2014 Fiscal Year Final Research Report

Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors

Research Project

  • PDF
Project/Area Number 24560365
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionSaitama University

Principal Investigator

HIJIKATA Yasuto  埼玉大学, 理工学研究科, 准教授 (70322021)

Co-Investigator(Renkei-kenkyūsha) YAGUCHI Hiroyuki  埼玉大学, 理工学研究科, 教授 (50239737)
Project Period (FY) 2012-04-01 – 2015-03-31
Keywords炭化ケイ素(SiC)半導体 / 熱酸化 / 積層欠陥 / 転位 / 酸化界面 / SiおよびC原子放出現象 / フォトルミネッセンス / 分光偏光解析
Outline of Final Research Achievements

For a better understanding of oxidation mechanism of silicon carbide (SiC), 1)Profiling of oxides on SiC, 2)Photoluminescence imaging of oxidized substrates, 3)Real-time observations of SiC oxidation processes have been performed. From result 1), we for the first time succeeded in the observation of “Si emission phenomenon” during oxidation of SiC from the oxidation interface to oxide. According to result 2), we found that there were stacking faults that are deformed by oxidation and there was a possibility that faults, which are similar to “oxidation-induced stacking fault” seen in Si oxidation, were also formed in Si oxidation. From result 3), a unified SiC oxidation model was established, and the formations of interface defect were simulated in terms of interface concentration of emitted Si and C atoms.

Free Research Field

半導体結晶工学

URL: 

Published: 2016-06-03  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi