2014 Fiscal Year Final Research Report
Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors
| Project/Area Number |
24560365
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Saitama University |
|---|
Principal Investigator |
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
YAGUCHI Hiroyuki 埼玉大学, 理工学研究科, 教授 (50239737)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Keywords | 炭化ケイ素(SiC)半導体 / 熱酸化 / 積層欠陥 / 転位 / 酸化界面 / SiおよびC原子放出現象 / フォトルミネッセンス / 分光偏光解析 |
|---|
| Outline of Final Research Achievements |
For a better understanding of oxidation mechanism of silicon carbide (SiC), 1)Profiling of oxides on SiC, 2)Photoluminescence imaging of oxidized substrates, 3)Real-time observations of SiC oxidation processes have been performed. From result 1), we for the first time succeeded in the observation of “Si emission phenomenon” during oxidation of SiC from the oxidation interface to oxide. According to result 2), we found that there were stacking faults that are deformed by oxidation and there was a possibility that faults, which are similar to “oxidation-induced stacking fault” seen in Si oxidation, were also formed in Si oxidation. From result 3), a unified SiC oxidation model was established, and the formations of interface defect were simulated in terms of interface concentration of emitted Si and C atoms.
|
| Free Research Field |
半導体結晶工学
|
