Spin devices having InAs nanowire / ferromagnetic metal hybrid structures formed by selective-area growth

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560368
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: AKABORI Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジ-センター, 准教授 (50345667)
• Co-Investigator(Renkei-kenkyūsha): YAMADA Syoji 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 教授 (00262593)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 選択成長 / MBE / InAs / ナノワイヤ / FET / スピン / MnAs

Outline of Final Research Achievements

For the application of selective-area-grown InAs nanowires to spin devices, we carried out growth on (112)B substrates, formation of 50-nm-thick InAs nanowires by wet etching, and fabrication and characterization of nanowire transistors. Also as the technologies of ferromagnetic electrode formation and spin characterization, we carried out fabrication and characterization of CoFe-InGaAs non-local spin-valve devices, growth of MnAs/InAs/GaAs(111)B, and fabrication and characterization of transmission-line-model devices. As a result, we successfully obtained knowledge for spin device application.

Free Research Field

ナノ構造プロセス･物性評価