2-dimentional mapping of graphene-inserted metal contacts

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560369
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Fukui
• Principal Investigator: SHIOJIMA Kenji 福井大学, 工学(系)研究科(研究院), 准教授 (70432151)
• Co-Investigator(Kenkyū-buntansha): HASHIMOTO Akihiro 福井大学, 大学院工学研究科, 教授 (10251985)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 窒化ガリウム / グラフェン / ショットキー電極 / ２次元評価

Outline of Final Research Achievements

We proposed new contact structure, inserting a graphene layer between metal and semiconductor to control the electrical characteristics. Since the size of the graphene layer is so small to cover the entire contact, we developed scanning internal photoemission microscopy for 2-dimentional mapping. We investigated Ni/graphene/n-GaN structure and found that graphene-inserted regions showed smaller Schottky barrier height. These results tell us that this structure is a candidate for better ohmic contacts to n-GaN.

Free Research Field

金属/半導体界面の評価