Study on MOCVD growth of InN-based semiconductors using NH3 decomposition catalysts

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560370
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Fukui
• Principal Investigator: YAMAMOTO Akio 福井大学, 産学官連携本部, 客員教授 (90210517)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 窒化インジウム / アンモニア / MOCVD / 触媒

Outline of Final Research Achievements

In the MOCVD using NH3 as a nitrogen source, the growth a high quality InN is expected if a high density of active nitrogen species such as NH2 is supplied at a low growth temperature (500 deg. C or less). In this study, the MOCVD growth of InN using NH3 decomposition catalyst is investigated. As a NH3 decomposition catalyst, the N134 ammonia decomposition catalysts produced by JGC Catalysts and Chemicals Ltd, Japan is employed in this study. It is found that single-crystalline InN can be grown even at 450 deg. C, which is much lower than the optimum growth temperature (600 deg. C) in the conventional MOCVD of InN. In addition, it is found that the migration of growing InN on GaN surface is highly enhanced at around 500 deg. C. Films of InGaN with InN content around 30 % is proved to be grown even at 480 deg. C. These results clearly indicate that the catalyst-assisted MOCVD can become a powerful method for film growth of high-quality InN-based materials in the near future.

Free Research Field

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