Development of novel spin devices using half-metallic ferromagnet/diamond semiconductor heterojunctions

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560372
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagoya University
• Principal Investigator: UEDA Kenji 名古屋大学, 工学(系)研究科(研究院), 准教授 (10393737)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: スピントロニクス / 半導体 / ダイヤモンド / ハーフメタル / ホイスラー

Outline of Final Research Achievements

In this study, we tried injecting spin polarized carriers efficiently from ferromagnets into semiconductors by combining diamond, which expected to have long spin diffusion length, and half-metallic Co2MnSi (CMS), which has high spin polarization. We found abrupt half-metallic CMS/diamond interfaces can be obtained by low temperature growth of CMS at around 300℃ and also observed spin signals by 3-terminal Hanle measurements, which was related to spin injection into diamond semiconductors. By the measurements, spin relaxation time was estimated to be 7 ns, which was relatively larger if we consider the value was obtained for heavily impurity doped semiconductors.

Free Research Field

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