2015 Fiscal Year Final Research Report
Investigation of ferroelectric tunnel effect by self-organized nano-crystals and realization of new memory application
| Project/Area Number |
24560374
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Fukuoka University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2012-04-01 – 2016-03-31
|
| Keywords | ナノ結晶 / 強誘電体 / スパッタ法 / 自己組織化 / 原子平坦 |
|---|
| Outline of Final Research Achievements |
New tunneling phenomena in nano-sized ferroeletcric thin films have been expected to apply for the universal memory with high density and without degradation. However, the phenomena have not been revealed for device applications, sufficiently. Thus, high quality ferroelectric nano-crystalline multilayers have been required for the development. In this study, newly developed sputtering technique was subjected to depositions of ferroelectric and metal nano-crystals. From the optimization of the deposition conditions and the improvement of sputtering equipments, high quality nano-crystals of several ferroelectric materials with uniform size and position can be obtained, in first step of this study. Consequently, the nano-sheet and their multilayer structure can also be fabricated, and nano-region and high current sensitivity observations in obtained specimens were also performed, successfully.
|
| Free Research Field |
工学
|
