Study on double spin-filter tunnel barrier growth and hole spin injector

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560375
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamaguchi University
• Principal Investigator: ASADA HIRONORI 山口大学, 理工学研究科, 准教授 (70201887)
• Co-Investigator(Kenkyū-buntansha): SENBA Shinya 宇部工業高等専門学校, 電気工学科, 准教授 (40342555)
• Co-Investigator(Renkei-kenkyūsha): KOYANAGI Tsuyoshi 山口大学, 大学院理工学研究科, 教授 (90178385)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: スピンフィルタ / 強磁性半導体

Outline of Final Research Achievements

We have grown a double spin-filter structure combining the ferromagnetic semiconductor EuS barrier with the p-type semiconductor GeTe by molecular beam epitaxy and obtained fully epitaxial GeTe/EuS/GeTe/EuS/GeTe multilayers. On InP(100) substrates, thought the EuS film exhibits (111) orientation growth, it is found that Te doped EuS grows in the substrate orientation. A thin EuS layer, which has the almost same thickness as the spin-filter tunnel barrier, has directly grown on semiconductor InP(100) substrates and the fully epitaxial EuS/GeTe(100) multilayer is obtained.

Free Research Field

磁気工学