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2014 Fiscal Year Final Research Report

Research on non-C-oriented green laser diodes with cleaved facet cavity mirrors

Research Project

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Project/Area Number 24560385
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKanazawa Institute of Technology

Principal Investigator

YAMAGUCHI Atsushi A.  金沢工業大学, 工学部, 教授 (60449428)

Project Period (FY) 2012-04-01 – 2015-03-31
Keywords半導体レーザ / 窒化物半導体
Outline of Final Research Achievements

Device strucutral design is very important for realizing high-performance and low-cost pure-green semiconductor laser diodes. In this work, reliability of material parameters which are used for the calculation of the structural design, has been investigated theoretically and experimentally. It is found that the reported parameters based on polarization-resolved PL measurements are not reliable due to large potential fluctuation in InGaN alloy material, and that polarization-resolved PLE measurements are needed for the precise determination of the parameters.

Free Research Field

半導体 光物性

URL: 

Published: 2016-06-03  

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