Preparation of high-quality non-c-axis oriented Bi-2223 single crystal thin films targeting fabrication of high-power THz device with nobel structure

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560386
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kanazawa Institute of Technology
• Principal Investigator: Endo Kazuhiro 金沢工業大学, 工学(系)研究科(研究院), 教授 (50356606)
• Co-Investigator(Kenkyū-buntansha): 立木 昌 東北大学, 理学(系)研究科(研究院), 客員研究員 (20028111) ; 有沢 俊一 独立行政法人物質・材料研究機構, 超伝導ユニット, 主幹研究員 (00354340)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: MOCVD法 / ビスマス系酸化物超伝導体 / 薄膜 / 配向制御 / テラヘルツ素子

Outline of Final Research Achievements

We prepared Bi-based oxide superconductor films on single crystal substrates of low dielectric constant targeting fabrication of high-power terahertz devices. We used our originally developed MOCVD apparatus. The as-obtained films were　characterized in detail from the structural viewpoint. In this respect, we developed and applied a new X-ray diffraction method. We found that our films are of high-quality, twin-free single crystal non-c-axis oriented epitaxial films. Some films were with the c-axis inclined approximately 45 degrees to the surface of the substrate. In　other cases, we have grown a-axis oriented films. To our knowledge, the growth of a-axis oriented Bi-2223 thin films is demonstrated for the first time.
The non-c-axis and a-axis oriented films enable fabrication of novel device structures expected to be the epoch-making high-power THz devices. The long awaited break through is focused especially on the coherent THz emission devices.

Free Research Field

材料科学