Exploring of layered semiconductors superior to graphene as electronic materials

2013 Fiscal Year Final Research Report

• Project/Area Number: 24651132
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: Yokohama National University
• Principal Investigator: TANAKA Masatoshi 横浜国立大学, 工学研究院, 教授 (90130400)
• Co-Investigator(Kenkyū-buntansha): OHNO Shin-ya 横浜国立大学, 工学研究院, 特別研究教員 (00377095) ; SEKIYA Takao 横浜国立大学, 工学研究院, 教授 (60211322) ; SHIMAZU Yoshihiro 横浜国立大学, 工学研究院, 准教授 (70235612) ; SUZUKI Takanori 防衛大学校, 応用物理学科, 教授 (60124369)
• Research Collaborator: KANEMURA Rui 横浜国立大学, 工学府, 博士課程前期学生 ; OKAWARA Satoru 横浜国立大学, 工学府, 博士課程前期学生 ; OGAWA Daisuke 横浜国立大学, 工学府, 博士課程前期学生 ; MURATA Kohtaro 横浜国立大学, 工学府, 博士課程前期学生 ; NINOMIYA Naruki 横浜国立大学, 工学府, 博士課程前期学生 ; MORISHITA Ryo 横浜国立大学, 工学府, 博士課程前期学生 ; OSADA Kazuki 横浜国立大学, 工学府, 博士課程前期学生
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: ナノ材料 / 層状物質 / 半導体物性 / 光物性 / 電子・電気材料

Research Abstract

Optical spectroscopic measurements provided us with information about lattice vibrations and electronic states of single and few-layer layered semiconductors. This information revealed competitive relationship between interlayer interaction and dielectric interaction and the effect of the interlayer interaction on the electronic states, which contributes to the development of fundamental research area directly connected to nano-electronics.
Field effect transistors (FETs) consisting of single layer MoS2 were successfully fabricated and the mobility of the FETs was at world highest level as a back-gate MoS2-FET. It is therefore considered that we will be able to find a layered semiconductor superior to graphene as an electronic material if we continue our study.

Research Products

• [Presentation] ナノレイヤZrトリカルコゲナイドのラマン分光 (2014)
  • Author(s): 長田一紀、森下亮、田中正俊、大野真也、鈴木隆則
  • Organizer: 日本物理学会第69回年次大会
  • Place of Presentation: 東海大学(29pPSA-20)
  • Year and Date: 20140300
• [Presentation] Layer-by-layer Etching of MoS2 Flakes during Etching Procces for Fabrication of MoS2 Transistors (2014)
  • Author(s): N. Ninomiya, T. Mori, R. Kanemura, N. Uchida, E. Watanabe, D. Tsuda, S. Moriyama, N. Miyata, T. Yasuda, M. Tanaka, A. Ando
  • Organizer: 7th Int. Conf. Plasma-Nano Technology & Science
  • Place of Presentation: Nagoya Univ., Nagoya
  • Year and Date: 20140300
• [Presentation] Raman and luminescence properties of single- and few-layer crystals of group VI transition metal dichalcogenides (2013)
  • Author(s): M. Tanaka, D. Ogawa, S. Okawara, S. Ohno, T. Suzuki
  • Organizer: 19^<th> Int. Vacuum Congress, NST/SS-P1-07
  • Place of Presentation: Palais des Congres, Paris
  • Year and Date: 20130900