• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2013 Fiscal Year Final Research Report

Development of time gating devices using electric field induced metal insulator transition

Research Project

  • PDF
Project/Area Number 24651173
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Microdevices/Nanodevices
Research InstitutionNational Institute for Materials Science

Principal Investigator

HAYASHI Masamitsu  独立行政法人物質・材料研究機構, 磁性材料ユニット, 主任研究員 (70517854)

Project Period (FY) 2012-04-01 – 2014-03-31
Keywordsナノ電子デバイス
Research Abstract

Vanadium oxide films were made by reactively sputtering Vanadium metal targets or Vanadium oxide targets in oxygen/Ar gas mixture. The amount of oxygen in the sputtering gas, sputtering power and substrate temperature were varied to study their influence on electronic/structural properties of the oxide film. The thickness of the oxide film was set to ~40 nm. Films were characterized using X-ray diffraction (XRD), Atomic force microscopy (AFM) and transport measurements.
The oxide film made by sputtering the metal (V) target showed XRD peaks corresponding to the VO2 (011) peak. However, the reproducibility of the film characteristics was a large problem, which is likely to do with oxidation of the metal target.
Sputtering the oxide target (V2O5) resulted in better reliability. XRD peaks corresponding to the VO2 (011) peaks were found when the substrate temperature was set near 600 C. These films showed metal-insulator transition but with a lower film quality characteristic.

  • Research Products

    (1 results)

All Other

All Remarks (1 results)

  • [Remarks]

    • URL

      http://www.nims.go.jp/apfim/spin/index.html

URL: 

Published: 2015-06-25  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi