Development of Light-Emitting Transistors with a Floating Gate

2014 Fiscal Year Final Research Report

• Project/Area Number: 24655173
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Functional materials/Devices
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: HOTTA Shu 京都工芸繊維大学, 工芸科学研究科, 教授 (00360743)
• Co-Investigator(Renkei-kenkyūsha): YAMAO Takeshi 京都工芸繊維大学, 工芸科学研究科, 准教授 (10397606)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 有機半導体 / （チオフェン/フェニレン）コオリゴマー / 金属酸化物半導体 / 発光トランジスタ / 浮遊ゲート / 移動度

Outline of Final Research Achievements

We have developed organic light-emitting transistors having an aluminum-doped zinc oxide (AZO) layer as a floating gate electrode. We observed bright light emissions under low applied voltages (~10 V) from devices in which the AZO and organic semiconductor layers were deposited in this order on a gate insulator layer. The devices having the organic layer sandwiched between the AZO and insulator layers indicated a high carrier mobility of 113 cm2/Vs along with light emission under low applied voltages (< 10 V).
We have used an organic crystal for the emission layer of the transistor. At first, we needed to apply voltages more than 100 V to the device for light emission. As a result of developing methods of etching of AZO layers, and fabrication and modification of carrier injection electrodes, we achieved the bright light emissions under applied voltages less than 100 V.

Free Research Field

光電子機能材料の創製と構造・物性研究