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2013 Fiscal Year Final Research Report

Control of generation of terahertz electromagnetic waves in semiconductor epitaxial structures by internal electric field

Research Project

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Project/Area Number 24656018
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionOsaka City University

Principal Investigator

NAKAYAMA Masaaki  大阪市立大学, 工学(系)研究科(研究院), 教授 (30172480)

Project Period (FY) 2012-04-01 – 2014-03-31
Keywordsテラヘルツ電磁波 / コヒーレント縦光学フォノン / 半導体エピタキシャル構造 / i-GaAs/n-GaAs構造 / GaAs/InAlAsひずみ多重量子井戸構造 / p-i-nダイオード構造(GaAs) / 内部電場制御 / フォノン分極
Research Abstract

We have investigated the control mechanisms of the terahertz (THz) electromagnetic waves from coherent longitudinal optical phonons in semiconductor epitaxial structures with use of internal electric fields.
It was found that the THz electromagnetic waves are markedly enhanced by a surface electric field due to surface Fermi level pinning in i-GaAs/n-GaAs epitaxial structures and by a piezoelectric field due to lattice strain in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells via an increase in phonon polarization. Furthermore, it was demonstrated that the THz electromagnetic waves are continuously and drastically enhanced by an applied bias voltage, which controls the internal electric field, in a p-i-n diode structure of GaAs: This provides us a novel concept of a THz device.

  • Research Products

    (13 results)

All 2014 2013 2012

All Journal Article (5 results) (of which Peer Reviewed: 5 results) Presentation (8 results) (of which Invited: 1 results)

  • [Journal Article] Radiation of terahertz electromagnetic waves from coherent longitudinal optical phonons in multiple quantum wells2013

    • Author(s)
      M. Nakayama
    • Journal Title

      J. Nanoelectron. Optoelectron

      Volume: Vol. 8 Pages: 415-4242013

    • DOI

      10.1166/jno.2013.1501

    • Peer Reviewed
  • [Journal Article] Voltage-controllable terahertz radiation from coherent longitudinal optical phonons in a p-i-n diode structure of GaAs2013

    • Author(s)
      M. Nakayama, S. Asai, H. Takeuchi, O. Ichikawa, and M. Hata
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol. 103 Pages: 141109-1-141109-4

    • DOI

      10.1063/1.4823595

    • Peer Reviewed
  • [Journal Article] Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures2013

    • Author(s)
      S. Tsuruta, H. Takeuchi, H. Yamada, M. Hata, and M. Nakayama
    • Journal Title

      J. Appl. Phys

      Volume: Vol. 113 Pages: 143502-1- 143502-5

    • DOI

      10.1063/1.4799060

    • Peer Reviewed
  • [Journal Article] Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure2013

    • Author(s)
      S. Tsuruta, H. Takeuchi, and M. Nakayama
    • Journal Title

      J. Phys.Conf. Ser

      Volume: Vol. 417 Pages: 012051-1-012051-6

    • DOI

      10.1088/1742-6596/417/1/012051

    • Peer Reviewed
  • [Journal Article] Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In_0.1Al_0.9As strained multiple quantum wells2013

    • Author(s)
      H. Takeuchi, S. Asai, S. Tsuruta, and M. Nakayama
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol. 100 Pages: 242107-1-242107-4

    • DOI

      10.1063/1.4729125

    • Peer Reviewed
  • [Presentation] GaAsダイオード構造におけるコヒーレントLOフォノンからのテラヘルツ電磁波発生の電圧制御2014

    • Author(s)
      中山正昭, 浅井聡太, 竹内日出雄, 市川磨, 秦雅彦
    • Organizer
      物理学会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2014-03-28
  • [Presentation] アンドープGaAs/n-type GaAsエピタキシャル構造における縦光学フォノンのRaman散乱分光とテラヘルツ電磁波発生2014

    • Author(s)
      竹内日出雄, 浅井聡太, 鶴田修一, 中山正昭
    • Organizer
      物理学会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2014-03-28
  • [Presentation] i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノンからのテラヘルツ電磁波に対する内部電場効果の影響2013

    • Author(s)
      中森一平, 竹内日出雄, 中山正昭
    • Organizer
      第24回光物性研究会
    • Place of Presentation
      大阪市立大学杉本キャンパス
    • Year and Date
      2013-12-13
  • [Presentation] i-GaAs/n-GaAsエピタキシャル構造におけるコヒーレントLOフォノンからのテラヘルツ電磁波の増強機構2013

    • Author(s)
      中森一平, 竹内日出雄, 中山正昭
    • Organizer
      物理学会
    • Place of Presentation
      徳島大学常三島キャンパス
    • Year and Date
      2013-09-27
  • [Presentation] Radiation of terahertz electromagnetic waves from coherent longitudinal optical phonons in multiple quantum wells2013

    • Author(s)
      M. Nakayama
    • Organizer
      Collaborative Conference on Materials Research
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2013-06-25
    • Invited
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからの高強度THz電磁波発生II2013

    • Author(s)
      浅井聡太, 竹内日出雄, 中山正昭
    • Place of Presentation
      広島大学東広島キャンパス
    • Year and Date
      2013-03-29
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからのテラヘルツ電磁波発生の励起強度依存性2012

    • Author(s)
      浅井聡太, 竹内日出雄, 中山正昭
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪市立大学杉本キャンパス
    • Year and Date
      2012-12-07
  • [Presentation] アンドープGaAs/n型GaAsエピタキシャル層構造におけるキャリア輸送過程に起因した超高速光応答2012

    • Author(s)
      長谷川尊之, 高木芳弘, 竹内日出雄, 山田永, 秦雅彦, 中山正昭
    • Organizer
      物理学会
    • Place of Presentation
      横浜国立大学常盤台キャンパス
    • Year and Date
      2012-09-18

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Published: 2015-06-25  

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