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2014 Fiscal Year Final Research Report

A high efficiency III nitride solar cell with graded composition top layer

Research Project

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Project/Area Number 24656019
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Applied materials science/Crystal engineering
Research InstitutionAichi Institute of Technology

Principal Investigator

SAWAKI Nobuhiko  愛知工業大学, 工学部, 教授 (70023330)

Co-Investigator(Renkei-kenkyūsha) HONDA Yoshio  名古屋大学, 大学院工学研究科, 准教授 (60362274)
Project Period (FY) 2012-04-01 – 2015-03-31
Keywords窒化物半導体 / 太陽電池 / ビルトイン電界効果 / 分極電界 / 格子空孔 / 黄色帯発光 / インパクトイオン化 / 炭素ドーピング
Outline of Final Research Achievements

Numerical studies has been done to improve the III-nitride solar cell performances. It was shown that, by adopting a graded composition p-type top layer in a single p-n junction solar cell, the conversion efficiency is enhanced up to 60 times by the internal built-in electric field which enhances the drift motion of photo-excited carriers. Optimum p-type top layer was estimated to be one thirds of the carrier diffusion length. In order to overcome the polarization self-compensation effects in a real device, reduction of Ga vacancy is essential to realize the p-type conduction in the graded layer on (0001) surface.

Free Research Field

半導体工学

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Published: 2016-06-03  

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