Development of single Dirac-particle devices

2013 Fiscal Year Final Research Report

• Project/Area Number: 24656023
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: MORIYAMA Satoshi 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 独立研究者 (00415324)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: グラフェン / 量子ドット / ディラック電子系

Research Abstract

Graphene consists of a single layer of carbon atoms and its quantum-dot (QD) devices are of significant research interest. In most previous attempts to fabricate such devices, the structures were etched from a graphene sheet by lithography, and the resulting devices consisted of QDs and small constrictions connected to the lead parts. Therefore, transport properties of graphene QD or nanoribbon devices are often dominated by edge roughness and disorder.
To address this situation, we propose a new device structure, in which graphene nanostructures are isolated and metallic contacts are directly deposited onto them without constrictions. We demonstrate that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene sheet, which indicates the quantum confinement-deconfinement transition switched by a magnetic field. This demonstration constitutes important advances to control single Dirac fermions in graphene electronics.

Research Products

• [Journal Article] Field-induced confined states in graphene (2014)
  • Author(s): S. Moriyama, Y. Morita, E. Watanabe, and D. Tsuya
  • Journal Title: Applied Physics Letters Volume: 104 Pages: 053108 (4 pages)
  • DOI: 10.1063/1.4864074
  • Peer Reviewed
• [Journal Article] Single electron transistors with ultra-thin Au nanowires as a single Coulomb island (2013)
  • Author(s): M. Yoshihira, S. Moriyama, H. Guerin, Y. Ochi, H. Kura, T. Ogawa, T. Sato and H. Maki
  • Journal Title: Applied Physics Letters Volume: 102 Pages: 203117 (4 pages)
  • DOI: 10.1063/1.4807806
  • Peer Reviewed
• [Journal Article] Coulomb blockade behavior in nanostructured graphene with direct contacts (2013)
  • Author(s): S. Moriyama, Y. Morita, E. Watanabe, and D. Tsuya
  • Journal Title: Materials Express Volume: 3 Pages: 92-96
  • DOI: 10.1166/mex.2013.1105
  • Peer Reviewed
• [Presentation] Electron transport through field-induced quantum dots in graphene (2013)
  • Author(s): S. Moriyama, Y. Morita, E. Watanabe, D. Tsuya (Keynote Lecture)
  • Organizer: 14th Edition of the "Trends in NanoTechnology" International Conference (TNT2013)
  • Place of Presentation: Seville, Spain
  • Year and Date: 20130909-13
• [Presentation] Superconducting fluctuations and phase slips in NbN nanowires on suspended carbon nanotubes (2013)
  • Author(s): S. Moriyama, T. Hashimoto, Y. Morita, K. Masuda, N. Miki, and H. Maki
  • Organizer: QFS2013, International Symposium on Quantum Fluids and Solids
  • Place of Presentation: Matsue, Shimane, Japan
  • Year and Date: 20130801-06
• [Presentation] Fabrication processes of two-dimensional MoS2 channel transistors (2013)
  • Author(s): T. Mori, R. Kanemura, E. Watanabe, D. Tsuya, S. Moriyama, T. Maeda, N. Uchida, N. Miyata, T. Yasuda, M. Tanaka and A. Ando :
  • Organizer: NIMS Conference 2013
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20130701-03
• [Presentation] 2次元層状MoS2トランジスタ形成プロセスの検討 (2013)
  • Author(s): 兼村瑠威,森貴洋,渡辺英一郎,津谷大樹,森山悟士,前田辰郎,内田紀行,宮田典幸,安田哲二,田中正俊,安藤淳
  • Organizer: 2013第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
  • Year and Date: 20130327-30
• [Presentation] Field-induced quantum dots in graphene mesoscopic structures (2013)
  • Author(s): Moriyama, Y. Morita, E. Watanabe, D. Tsuya
  • Organizer: MANA International Symposium 2013
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20130227-0301
• [Presentation] Transport spectroscopy of Field-induced quantum confinement in graphene (2012)
  • Author(s): Moriyama, Y. Morita, E. Watanabe, D. Tsuya (Late News paper):
  • Organizer: SSDM 2012, International conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 20120925-27
• [Presentation] グラフェンメゾスコピック構造における磁場を用いた単一ディラック電子制御 (2012)
  • Author(s): 森山悟士,守田佳史,渡辺英一郎,津谷大樹
  • Organizer: 2012秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛
  • Year and Date: 20120911-14
• [Presentation] グラフェンメゾスコピック構造に形成される磁場誘起量子ドット素子 (2012)
  • Author(s): 森山悟士
  • Organizer: 第2回半導体量子効果と量子情報の夏季研修会
  • Place of Presentation: 栃木
  • Year and Date: 20120905-07
• [Presentation] Graphene nanostructures for building blocks of quantum-dot based nanodevices (2012)
  • Author(s): S. Moriyama, Y. Morita, K. Ishibashi, E. Watanabe, D. Tsuya (invited)
  • Organizer: CIMTEC 2012, 4th International Conference on Smart Materials, Structures and Systems
  • Place of Presentation: Montecatini Terme, Italy
  • Year and Date: 20120610-14
  • Invited
• [Presentation] グラフェンを用いた電子デバイスの開発と応用 (2012)
  • Author(s): 森山悟士
  • Organizer: Electronic Journal第1088回Technical Seminar
  • Place of Presentation: 東京
  • Year and Date: 2012-04-27
  • Invited
• [Presentation] グラフェンの基礎物性と応用可能性～最新動向 (2012)
  • Author(s): 森山悟士
  • Organizer: 情報機構化学・電気系セミナー
  • Place of Presentation: 東京
  • Year and Date: 2012-04-17
  • Invited
• [Book] "グラフェンの微細加工プロセスと単電子素子の作製",『2013ナノカーボン技術大全』,第5編5章(pp.97-101) (2012)
  • Author(s): 森山悟士
  • Total Pages: 97-101
  • Publisher: 株式会社電子ジャーナル