2013 Fiscal Year Final Research Report
Controlling of Single Photon Source in Silicon Carbide
| Project/Area Number |
24656025
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Japan Atomic Energy Agency |
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Principal Investigator |
OHSHIMA Takeshi 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究主幹 (50354949)
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| Co-Investigator(Kenkyū-buntansha) |
UMEDA Takehide 筑波大学, 数理物質科学研究科(系), 准教授 (10361354)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 炭化ケイ素 / 欠陥エンジニアリング / スピン / 新機能材料 / 量子コンピューティング |
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| Research Abstract |
In order to find new defects which act as single photon sources in Silicon Carbide (SiC), semi-insulating SiC wafers were irradiated with 2 MeV electrons and subsequently annealed in Argon at temperature ranges between 300 and 500 C. As a results, in addition to luminescence from Si vacancies (Vsi) which have been reported as single photon source in SiC, the very strong luminescence at wavelength regions between 670 and 700 nm were observed even at room temperature. By the photo luminescence measurements at low temperature, it was concluded that the origin of those luminescence is positively charged carbon antisite – carbon vacancy pair (CsiVc). Also, it was revealed from antibunching measurements using a confocal microscope that CsiVc act as single photon source in SiC.
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